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| FJP5554 High Voltage Fast Switching Transistor FJP5554 High Voltage Fast Switching Transistor Features * Fast Speed Switching * Wide Safe Operating Area * Suitable for Electronic Ballast Application 1 1.Base TO-220 2.Collector 3.Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature Value 1050 400 15 4 8 70 150 -55 ~ 150 Units V V V A A W C C * Pulse Test: PW = 300s, Duty Cycle = 2% Pulsed Package Marking and Ordering Information Device Marking J5554 J5554 Device FJP5554TU FJP5554 Package TO-220 TO-220 Reel Size - Tape Width - Quantity 50 200 (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJP5554 Rev. A FJP5554 High Voltage Fast Switching Transistor Electrical Characteristics Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) tON tSTG tF TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time Conditions IC = 500A, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCB = 1050V, IE = 0 VCB = 400V, IB = 0 VEB = 15V, IC = 0 VCE = 5V, IC = 0.1A VCE = 3V, IC = 0.8A IC = 1A, IB = 0.2A IC = 3.5A, IB = 1.0A IC = 3.5A, IB = 1.0A VCC=125V, IC=0.5A IB1=45mA, IB2=0.5A RL=250 Min. 1050 400 15 Typ. Max Units V V 23 1 250 1 V mA A mA 45 20 100 50 0.5 1.5 1.5 1.0 1.2 0.3 V V V s s s FJP5554 Rev. A 2 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Typical Performance Characteristics Figure 1. Static Characterstic 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Figure 2. DC Current Gain VCE=3V IC [A], COLLECTOR CURRENT IB=350mA hFE, DC CURRENT GAIN TC= 125 C 100 o TC= 75 C o IB=150mA IB=100mA IB=50mA TC= - 25 C o TC= 25 C o 10 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. DC Current Gain VCE=5V Figure 4. Collector-Emitter Saturation Voltage 10 hFE, DC CURRENT GAIN TC= 125 C 100 o TC= 75 C o VCE(SAT) [V], SATURATION VOLTAGE IC=3.5 IB TC= 75 C 1 o TC= - 25 C o TC= 25 C o TC= 125 C TC= 25 C TC= - 25 C o o o 10 0.1 1 0.01 0.1 1 10 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter Saturation Voltage 10 Figure 6. Output Capacitance 1000 VBE(sat) [V], SATURATION VOLTAGE 1 TC= - 25 C TC= 125 C o o TC= 25 C o COB [pF], OUTPUT CAPACITANCE IC=3.5 IB f = 1MHz, IE=0 100 TC= 75 C o 0.1 0.1 1 10 10 0.1 1 10 100 IC [A], COLLECTOR CURRENT VCB [V], COLLECTOR-BASE VOLTAGE FJP5554 Rev. A 3 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Typical Performance Characteristics (Continued) Figure 7. Reverse Biased Safe Operating Area 10 9 Figure 8. Forward Biased Safe Operating Area 100 IC [A], COLLECTOR CURRENT 8 7 6 5 4 3 2 1 IC [A], COLLECTOR-CURRENT Single Pulse o TC=25 C 10 Pulse 100ms DC 10ms 1ms 1 VBE(off)=-5V RBE(off)=1 ohm VCC=50V, IB1=1.2A L=1mH 0 200 400 600 800 1000 1200 0.1 0.01 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Power Derating Curve PC [W], COLLECTOR POWER DISSIPATION 100 80 60 40 20 0 0 25 o 50 75 100 125 150 TC [ C], CASE TEMPERATURE FJP5554 Rev. A 4 www.fairchildsemi.com FJP5554 High Voltage Fast Switching Transistor Mechanical Dimensions TO-220 Dimensions in Millimeters FJP5554 Rev. A 5 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 |
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